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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A TO220AB
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：124 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6280 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK7510-55AL is an N-channel TrenchMOS standard level Field-Effect Transistor designed for automotive critical applications. It features a 55 V drain-source voltage rating and supports continuous drain currents up to 75 A at a mounting base temperature of 25 °C, with peak pulsed current capability reaching 490 A. The device utilizes TO-220AB packaging with a heatsink-mounted configuration, enabling total power dissipation of 300 W. It operates reliably within a junction temperature range of -55 °C to 175 °C and includes an integrated source-drain diode.
Feature Summary
- Compliant with the Q101 automotive standard for reliability in demanding environments.
- Capable of stable operation in linear mode suitable for control systems.
- Engineered for thermally demanding conditions with a maximum junction temperature rating of 175 °C.
Applications
- Control systems requiring stable linear mode operation
- DC motor control circuits
- Repetitive clamped inductive switching loads
Procurement Notes
Verify the specific package variant against the ordering information table to ensure compatibility with the required thermal management solution. Confirm that the application design accounts for the absolute maximum ratings, particularly regarding repetitive avalanche energy limits and junction temperature constraints during operation.
Selection Notes
Select this component when designing for 12 V or 24 V automotive load applications requiring high current handling capabilities. Ensure the PCB layout and heatsinking strategy can support the specified thermal resistance values to maintain junction temperatures within the safe operating area defined in the datasheet characteristics.
Part Context
This part belongs to the NXP BUK75 series of N-channel TrenchMOS power MOSFETs. These devices are specifically engineered using TrenchMOS technology to provide low on-state resistance and robust performance in plastic packages. The series targets automotive markets where compliance with strict environmental and reliability standards is mandatory.
Replacement Considerations
Consult the official NXP product selector tools or datasheets for direct pin-compatible alternatives within the BUK75 family. Verify that any substitute maintains the same TO-220AB (SOT78) package outline and meets the Q101 qualification requirements for automotive use.
