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Product Detailed Parameters
- Description：PFET, 75A I(D), 75V, 0.013OHM, 1
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The BUK7513-75B,127 is an N-channel enhancement mode power transistor utilizing Philips High-Performance Automotive (HPA) TrenchMOS technology. It features a drain-source voltage of 75 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 11.7 mΩ at 10 V gate drive and supports a total power dissipation of 157 W. It includes avalanche ruggedness rated at 125 mJ and operates with junction temperatures up to 175 °C.
Feature Summary
- Compliant with Q101 automotive standards for reliability
- Rated for operation in thermally demanding environments up to 175 °C
- Compatible with standard level gate drive sources
- Features very low on-state resistance for efficient switching
Applications
- Automotive systems
- 12 V, 24 V, and 42 V loads
- Motors, lamps and solenoids
- General purpose power switching
Procurement Notes
Verify the specific package variant required, as the datasheet distinguishes between the BUK7513-75B in SOT78 (TO-220AB) and the BUK7613-75B in SOT404 (D2-PAK). Confirm that the ordering suffix matches the intended physical form factor. Ensure design parameters align with the absolute maximum ratings provided in the official product data sheet before finalizing procurement.
Selection Notes
Select this component for applications requiring high current handling and robust thermal performance in automotive or industrial settings. The standard level gate compatibility simplifies driver circuit design. Consider the thermal resistance characteristics when designing heat sinking solutions, particularly given the high power dissipation capabilities and the requirement for effective mounting base cooling to maintain optimal electrical performance.
Part Context
This part belongs to the BUK75/7613 series of TrenchMOS standard level FETs manufactured by Philips Semiconductors (now Nexperia). The series utilizes HPA technology to deliver high performance in automotive critical applications. The BUK7513-75B specifically denotes the through-hole TO-220AB package version, distinct from the surface-mount D2-PAK variant within the same electrical family.
Replacement Considerations
BUK7613-75B offers identical electrical specifications but utilizes the SOT404 (D2-PAK) surface-mount package instead of the SOT78 (TO-220AB) through-hole package.
