BUK7514-60E,127

Description：MOSFET N-CH 60V 58A TO220AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube

SKU:6d9537ec915e Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 58A TO220AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：13mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：22.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1730 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：96W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK7514-60E,127

Overview

The BUK7514-60E is an N-channel TrenchMOS standard level FET designed for high-performance automotive applications. It operates with a drain-source voltage of 60 V and supports a continuous drain current of 58 A at 25 °C mounting base temperature. The device features a low on-state resistance of 9.6 mΩ typical value at 25 °C and handles up to 96 W total power dissipation. It includes repetitive avalanche rating capabilities and maintains true standard level gate characteristics with a threshold voltage greater than 1 V even at 175 °C junction temperature.

Feature Summary

AEC Q101 compliant for automotive reliability
Repetitive avalanche rated for robust operation
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1V at 175 °C

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the manufacturer status carefully as the former NXP Standard Product business became Nexperia in February 2017. Ensure documentation references are updated to Nexperia where applicable. Confirm package version SOT78A matches design requirements. Check for any specific automotive qualification certificates required by your supply chain standards before finalizing procurement decisions.

Selection Notes

Select this component when designing circuits requiring a 60 V N-channel MOSFET with high current handling capabilities. The TO-220AB package facilitates heatsink mounting for thermal management. Consider the 175 °C junction temperature rating for high-temperature environments. Verify gate drive compatibility given the standard level gate threshold specifications across varying temperatures.

Part Context

This part belongs to the TrenchMOS technology family, utilizing advanced trench gate structures for improved performance. It is specifically engineered for automotive-grade reliability, meeting stringent AEC Q101 standards. The device integrates ruggedness features suitable for harsh electrical environments found in vehicle power distribution and control systems.