BUK7528-55,127

Description：MOSFET N-CH 55V 40A TO220AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube

SKU:1730b1859497 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 40A TO220AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：28mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：96W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK7528-55,127

Overview

The BUK7528-55,127 is an N-channel enhancement mode standard level field-effect power transistor manufactured by Philips Semiconductors (now Nexperia). It utilizes 'trench' technology to achieve very low on-state resistance and features integral Zener diodes providing electrostatic discharge (ESD) protection up to 2 kV. The device is housed in a TO-220AB plastic envelope with the drain tab connected to pin 2. Key electrical parameters include a maximum drain-source voltage of 55 V, a continuous DC drain current of 40 A at 25 °C mounting base temperature, and a typical drain-source on-state resistance of 28 mΩ at VGS = 10 V.

Feature Summary

Utilizes TrenchMOS technology for low on-state resistance
Features integral Zener diodes for ESD protection
Designed for automotive and general purpose switching applications

Applications

Automotive switching circuits
General purpose power switching
High current load control

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm the datasheet revision matches the production batch requirements. Ensure proper handling precautions are observed due to the sensitivity of the MOS gate oxide to electrostatic discharge during storage and installation.

Selection Notes

Select this component for applications requiring robust N-channel switching with high current capabilities. Consider the thermal resistance characteristics and derating curves when designing heat dissipation solutions. Verify that the gate drive voltage meets the minimum threshold for optimal conduction performance.

Part Context

This part belongs to the BUK75xx series of N-channel Power MOSFETs from Philips/Nexperia. These devices are characterized by their use of trench technology to minimize conduction losses while maintaining ruggedness suitable for demanding environments.