BUK753R8-80E,127

$1.21

Description：TRANSISTOR >30MHZ
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:8759f4414d90 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：TRANSISTOR >30MHZ
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：169 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：12030 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：349W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Download product information

BUK753R8-80E,127

Overview

The BUK753R8-80E is a standard level N-channel MOSFET utilizing TrenchMOS technology in a TO-220AB (SOT78A) package. It features an 80 V drain-source voltage rating and supports a continuous drain current of 120 A at a mounting base temperature of 25 °C. The device exhibits a maximum on-state resistance of 4 mΩ at 25 °C and 9.7 mΩ at 175 °C, with a total power dissipation capacity of 349 W. Qualified to the AEC-Q101 standard, it operates within a junction temperature range of -55 °C to 175 °C.

Feature Summary

Compliant with AEC-Q101 automotive qualification standards for high-performance applications.
Rated for repetitive avalanche operation to withstand transient energy events.
Designed for thermally demanding environments with a 175 °C junction temperature capability.
Features a true standard level gate threshold exceeding 1 V at elevated temperatures.

Applications

12V, 24V and 48V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging and marking codes. Confirm that the TO-220AB package variant matches the thermal management requirements of the target design. Cross-reference the AEC-Q101 qualification status with project specifications to ensure compliance with automotive reliability standards before finalizing procurement.

Selection Notes

Select this component for designs requiring robust automotive-grade switching capabilities with high current handling. The standard level gate drive simplifies driver circuit design while maintaining efficiency. Ensure adequate heatsinking is provided to manage the 349 W power dissipation potential, as performance is heavily dependent on mounting base temperature conditions.

Part Context

This part belongs to Nexperia's TrenchMOS standard level FET portfolio, optimized for automotive reliability. It utilizes advanced trench gate technology to achieve low conduction losses. The SOT78A package provides a robust mechanical structure suitable for direct heatsink mounting, facilitating effective thermal transfer in compact automotive enclosures.