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Product Detailed Parameters
- Description：MOSFET N-CH 40V 100A TO220AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：97 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5708 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：203W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK754R0-40C,127 is an N-channel TrenchMOS standard level FET designed for high-performance automotive applications. It utilizes advanced TrenchMOS technology in a plastic package to ensure robust construction suitable for thermally demanding environments up to a 175°C rating. The component is AEC-Q101 compliant and features avalanche robustness, making it appropriate for standard level gate drive configurations.
Feature Summary
- AEC Q101 compliant for automotive reliability
- Avalanche robust construction
- Suitable for standard level gate drive
- Rated for thermally demanding environments up to 175°C
Applications
- 12V Motor loads
- Lamp and solenoid loads
- High performance automotive power systems
- High performance Pulse Width Modulation (PWM) applications
Procurement Notes
Verify the specific suffix '127' against official Nexperia documentation to confirm exact packaging or tape-and-reel specifications. Ensure the component meets current AEC-Q101 standards for the intended automotive application environment.
Selection Notes
Select this component for designs requiring standard level gate drive compatibility and high thermal stability. Its TrenchMOS technology supports efficient switching in demanding automotive power systems where avalanche robustness is critical.
Part Context
This part belongs to the Nexperia TrenchMOS family of N-channel enhancement mode Field-Effect Transistors. These devices are engineered using advanced silicon technology to provide low on-resistance and high efficiency in compact plastic packages suitable for surface mount assembly.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference key parameters such as Vdss, Id, Rds(on), and package type when evaluating potential replacement components.
