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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A D2PAK
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：4500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：187W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK7608-55,118 is an N-channel enhancement mode standard level field-effect power transistor manufactured by Nexperia (formerly NXP). It utilizes TrenchMOS technology to achieve very low on-state resistance and includes integral Zener diodes for ESD protection up to 2kV. The device is housed in a plastic SOT404 envelope suitable for surface mounting. Key electrical parameters include a drain-source voltage of 55 V, a DC drain current of 75 A at 25°C, and a total power dissipation of 187 W. The maximum junction temperature is 175°C.
Feature Summary
- TrenchMOS technology provides very low on-state resistance for efficient switching performance.
- Integral Zener diodes offer electrostatic discharge (ESD) protection up to 2 kV.
- Designed for robust operation in automotive and general purpose switching applications.
Applications
- Automotive switching circuits
- General purpose power switching
- High-current load management
Procurement Notes
Verify the manufacturer status carefully. The datasheet indicates that the former NXP Standard Product business became Nexperia B.V. on February 7, 2017. Ensure procurement channels source from Nexperia or authorized distributors holding valid stock of this legacy component. Confirm package type SOT404 and pinout compatibility with existing designs before ordering.
Selection Notes
Select this component for applications requiring high current handling up to 75 A and low conduction losses due to its 8 mΩ on-resistance. The 55 V rating suits low-voltage systems. Consider the thermal resistance of 0.8 K/W junction-to-mounting base for heatsink design. Verify that the operating environment supports the specified -55°C to 175°C junction temperature range.
Part Context
This part belongs to the Philips/Nexperia TrenchMOS family of N-channel MOSFETs. It is characterized as a standard level FET optimized for surface mounting. The product specification was originally published by Philips Semiconductors and later maintained under the Nexperia brand following the corporate restructuring of the standard product division.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Designers should consult Nexperia's official replacement guides or cross-reference tools for compatible devices with similar voltage, current, and package specifications.
