BUK7614-55A,118

Description：MOSFET N-CH 55V 73A D2PAK
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:62810aebe8d2 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 73A D2PAK
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：14mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2464 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：166W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Download product information

BUK7614-55A,118

Overview

The NXP BUK7614-55A,118 is an N-channel enhancement mode standard level field-effect power transistor utilizing TrenchMOS technology. It features a low on-state resistance of 14 mΩ at VGS = 10 V and supports a continuous drain current of 73 A. The device offers a drain-source voltage rating of 55 V and total power dissipation up to 166 W. It is available in TO220AB (SOT404) packages with a junction temperature range of -55 °C to 175 °C.

Feature Summary

TrenchMOS technology for very low on-state resistance
Universal availability in through-hole and surface-mount plastic envelopes
Integrated reverse diode for synchronous rectification applications

Applications

Automotive switching applications
General purpose switching applications
Motor control circuits

Procurement Notes

Verify the specific package variant required during procurement, as the component is offered in both TO220AB and SOT404 configurations. Confirm that the ordering suffix matches the desired mechanical footprint. Ensure electrostatic discharge handling precautions are observed due to the sensitivity of the MOS gate oxide. Cross-reference the exact part number with manufacturer documentation to confirm current product status.

Selection Notes

Select this component for designs requiring high current handling capabilities within a 55 V system. The low RDS(ON) minimizes conduction losses, making it suitable for efficient power conversion. Consider thermal management requirements based on the specified thermal resistances. Evaluate the internal drain inductance values if high-speed switching performance is critical for the application design.

Part Context

This device belongs to the Philips Semiconductors TrenchMOS family, now under NXP. It represents a standard level FET designed for robust performance in industrial and automotive environments. The product specification highlights its capability to handle significant power dissipation while maintaining compact physical dimensions in dual package options.