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The BUK761R8-30C is an N-channel enhancement mode power Field-Effect Transistor utilizing Nexperia's UHP automotive TrenchMOS technology. It features a 30 V drain-source voltage rating and supports continuous drain currents up to 100 A at 25 °C mounting base temperature, with peak pulsed current reaching 1249 A. The device exhibits a maximum on-state resistance of 1.8 mΩ at 25 °C and 3.4 mΩ at 175 °C. Rated for junction temperatures up to 175 °C, it includes avalanche ruggedness capabilities with non-repetitive energy handling of 1.7 J.
Verify the specific ordering suffix against manufacturer documentation to confirm package variant and compliance status. Confirm RoHS and REACH alignment with project requirements. Check for any Product Change Notifications regarding assembly location or marking updates. Ensure thermal management design accounts for the SOT404 package limitations. Validate supply chain authenticity through authorized distributors.
Select this component for applications requiring low conduction losses in 12 V automotive architectures. The standard level gate drive simplifies driver circuit design compared to logic level alternatives. Consider the 175 °C thermal rating for high-density packaging where heat dissipation is challenging. Evaluate avalanche energy requirements if inductive load switching is frequent.
This part belongs to the BUK761 series of N-channel TrenchMOS FETs designed for automotive use. It shares the SOT404 (D2PAK) package form factor with other variants in the lineup. The series focuses on balancing low RDS(on) with robust thermal performance for general-purpose power switching in vehicles.
BUK761R8-30E is a documented equivalent within the same family offering identical electrical characteristics and pinout configuration.