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The BUK7624-55A,118 is an N-channel enhancement mode power MOSFET utilizing TrenchMOS technology, housed in a SOT404 (D2-PAK) plastic package. It features a drain-source voltage rating of 55 V and a continuous drain current capability of 47 A at a mounting base temperature of 25 °C. The device exhibits a maximum on-state resistance of 24 mΩ at 25 °C and 48 mΩ at 175 °C. Total power dissipation reaches 106 W under standard thermal conditions, with a junction temperature limit of 175 °C.
Verify the component source carefully as the original NXP Standard Product business was transferred to Nexperia in February 2017. Ensure documentation references Nexperia rather than legacy NXP or Philips entities. Confirm the specific ordering suffix matches the required package variant and that the datasheet revision aligns with current manufacturing specifications before finalizing procurement.
Select this component for designs requiring robust automotive-grade reliability and high current handling in a surface-mount D2-PAK footprint. Evaluate thermal management requirements based on the 106 W dissipation limit at 25 °C mounting base temperature. Consider the 175 °C junction rating for high-temperature environments and ensure gate drive voltages remain within the specified limits for optimal performance.
This part belongs to the BUK7524/BUK7624 series of TrenchMOS standard level FETs. While functionally similar to the through-hole BUK7524-55A in the TO-220AB package, the BUK7624-55A utilizes the SOT404 surface-mount package. Both variants share identical electrical characteristics and are designed for general-purpose and automotive power switching applications.
The BUK7524-55A serves as a package-compatible alternative offering identical electrical specifications but housed in a SOT78 (TO-220AB) leaded package instead of the SOT404 surface-mount configuration.