BUK762R0-40E,118

BUK762R0-40E,118

  • Description:MOSFET N-CH 40V 120A D2PAK
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:d1c0698c478f Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N-CH 40V 120A D2PAK
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:2mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:109.2 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:8500 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):293W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK762R0-40E,118

Overview

The BUK762R0-40E,118 is a standard level N-channel MOSFET utilizing TrenchMOS technology in a SOT404 (D2PAK) package. It features a drain-source voltage of 40 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 2 mΩ at 25 °C and supports junction temperatures up to 175 °C. Total power dissipation reaches 293 W under specified conditions.

Feature Summary

  • AEC Q101 compliant for automotive reliability
  • Repetitive avalanche rated capability
  • Suitable for thermally demanding environments with 175 °C rating
  • True standard level gate with threshold voltage greater than 1 V at 175 °C

Applications

  • 12 V Automotive systems
  • Motors, lamps and solenoid control
  • Start-Stop micro-hybrid applications
  • Transmission control
  • Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for high-current automotive applications requiring robust thermal performance and standard gate drive compatibility. Ensure the design accommodates the 120 A package-limited current and utilizes adequate heatsinking to manage the 293 W power dissipation potential. Verify that the application voltage remains within the 40 V drain-source limit.

Part Context

This part belongs to Nexperia's BUK76 series of N-channel TrenchMOS FETs designed for automotive use. It shares the SOT404 package form factor with other variants in the lineup but is distinguished by its specific 40 V rating and low on-resistance characteristics optimized for 12 V system architectures.

Replacement Considerations

BUK762R0-40E is listed as End of Life. Consider BUK761R7-40E,118 as a potential alternative within the same family, though verification of pinout and electrical parameters against the original design requirements is necessary.

BUK762R0-40E,118BUK762R0-40E,118

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