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Product Detailed Parameters
- Description：MOSFET N-CH 40V 100A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：79 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6200 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：234W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK762R9-40E,118 is an N-channel TrenchMOS standard level MOSFET manufactured by Nexperia. It utilizes TrenchMOS technology and is housed in a D2PAK (SOT404) surface-mounted package with three leads. The device is qualified to the AEC-Q101 standard for automotive applications. Key electrical parameters include a drain-source voltage of 40 V, a continuous drain current of 100 A at 25 °C mounting base temperature, and a total power dissipation of 234 W. The typical on-state resistance is 2.4 mΩ at 25 °C, rising to 5.5 mΩ at 175 °C. It features a true standard level gate with a threshold voltage greater than 1 V at 175 °C.
Feature Summary
- AEC-Q101 compliant for high-performance automotive applications
- Repetitive avalanche rated for robust construction
- Suitable for thermally demanding environments due to 175 °C rating
- True standard level gate with VGS(th) rating of greater than 1V at 175 °C
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring AEC-Q101 qualification for automotive use. Ensure thermal management supports the 175 °C junction temperature limit. Verify that the gate drive voltage meets the requirements for the standard level gate threshold characteristics specified in the datasheet.
Part Context
This part belongs to the Nexperia BUK76 series of N-channel TrenchMOS FETs. These devices are designed for high-efficiency power switching in automotive and industrial environments. The SOT404 package provides low thermal resistance and high current handling capabilities suitable for demanding power applications.
Replacement Considerations
Check pinout compatibility and electrical specifications against potential substitutes. Ensure any replacement part also meets AEC-Q101 standards if used in automotive contexts. Verify thermal resistance and package dimensions for mechanical fit.
