BUK7631-100E,118

$0.67

Description：NEXPERIA BUK7631 - TRANSISTOR >3
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:79b7d496e5eb Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：NEXPERIA BUK7631 - TRANSISTOR >3
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：31mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：29.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1738 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：96W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK7631-100E,118

Overview

The BUK7631-100E is a standard level N-channel MOSFET utilizing TrenchMOS technology in a SOT404 (D2PAK) package. Designed for high-performance automotive applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 100 V and a continuous drain current of 34 A at 25 °C mounting base temperature. The device features a typical on-state resistance of 24.3 mΩ at 25 °C and supports junction temperatures up to 175 °C. It exhibits repetitive avalanche ruggedness with a non-repetitive avalanche energy rating of 39.4 mJ.

Feature Summary

AEC-Q101 compliant for automotive reliability
Repetitive avalanche rated for robust operation
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating greater than 1V at 175 °C

Applications

12V, 24V and 48V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package variant and tape/reel configuration. Confirm that the component status matches current production availability, as datasheet statuses may change from preliminary to product data sheets. Cross-reference the marking code with the official table to validate authenticity upon receipt.

Selection Notes

Select this component for circuits requiring a 100 V N-channel switch with low conduction losses. The standard level gate drive simplifies interface design with common logic or driver ICs. Ensure thermal management strategies account for the junction-to-mounting base thermal resistance when operating near the maximum temperature limit. Verify that peak current demands remain within the safe operating area limits defined in the datasheet.

Part Context

This part belongs to Nexperia's TrenchMOS family, specifically engineered for automotive-grade reliability. The SOT404 package provides efficient heat dissipation through a dedicated mounting base connected to the drain. The device integrates advanced trench technology to minimize on-resistance while maintaining high breakdown voltage capabilities suitable for harsh automotive electrical environments.