BUK763R1-60E,118

$2.54

Description：MOSFET N-CH 60V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5c0b8fc79b1d Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：114 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：8920 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：293W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK763R1-60E,118

Overview

The BUK763R1-60E is a standard level N-channel MOSFET utilizing TrenchMOS technology in a SOT404 (D2PAK) package. Designed for high-performance automotive applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 60 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 3.1 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 293 W under specified conditions. It supports junction temperatures up to 175 °C and features repetitive avalanche rating capability.

Feature Summary

AEC-Q101 compliant for automotive reliability
Repetitive avalanche rated for rugged operation
Suitable for thermally demanding environments with 175 °C rating
True standard level gate with VGS(th) greater than 1V at 175 °C

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for designs requiring robust automotive-grade N-channel switching with low conduction losses. Ensure thermal management accommodates the 293 W dissipation limit at 25 °C mounting base temperature. Verify that gate drive voltages align with the standard level gate requirements, particularly considering the threshold voltage characteristics at elevated junction temperatures up to 175 °C.

Part Context

This part belongs to Nexperia's BUK76 series of TrenchMOS standard level FETs. These devices are engineered for high-current applications using advanced trench gate technology. The SOT404 package provides efficient thermal transfer through the mounting base, which is internally connected to the drain terminal, facilitating effective heat dissipation in compact surface-mount layouts.

Replacement Considerations

Direct replacements must match the 60 V rating, 120 A current capacity, and D2PAK (SOT404) package. Verify that alternative parts also meet AEC-Q101 standards if automotive qualification is required. Check for compatible on-state resistance and gate charge specifications to ensure equivalent switching performance and thermal behavior.