BUK763R8-80E,118

$3.26

Description：MOSFET N-CH 80V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:df93c351ca91 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：169 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：12030 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：357W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK763R8-80E,118

Overview

The BUK763R8-80E,118 is an N-channel TrenchMOS standard level FET in a D2PAK (SOT404) package. It features a drain-source voltage of 80 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The maximum on-state resistance is 3.8 mΩ at 10 V gate drive and 25 A. Total power dissipation reaches 349 W under specified conditions. The device supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

AEC-Q101 qualified for high-performance automotive applications
Repetitive avalanche rated for robust operation
Suitable for thermally demanding environments with a 175 °C rating
True standard level gate with threshold voltage greater than 1 V at 175 °C

Applications

12V, 24V and 48V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for designs requiring high current handling in automotive contexts. Ensure thermal management aligns with the 0.43 K/W junction-to-mounting-base resistance. Verify that the application voltage remains within the 80 V limit and that gate drive signals accommodate the standard level threshold characteristics across the full operating temperature range.

Part Context

This part belongs to Nexperia's TrenchMOS standard level FET family. It utilizes silicon technology to provide enhanced performance in a surface-mounted plastic package. The product line is designed to meet rigorous automotive reliability standards while offering efficient power switching capabilities for various vehicle subsystems.

Replacement Considerations

Check datasheets for alternative parts with matching 80 V ratings, similar RDS(on), and compatible D2PAK footprints. Confirm that any substitute also holds AEC-Q101 qualification if required by the design specifications.