BUK763R9-60E,118

$2.46

Description：MOSFET N-CH 60V 100A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT),Bulk

SKU:a7abe59eccb7 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 100A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT),Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：103 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7480 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：263W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK763R9-60E,118

Overview

The BUK763R9-60E is a standard level N-channel MOSFET utilizing TrenchMOS technology in a D2PAK (SOT404) package. It features a drain-source voltage of 60 V and a continuous drain current of 100 A at 25 °C mounting base temperature. The device supports a total power dissipation of 263 W under specified conditions. Key electrical parameters include a maximum on-state resistance of 3.9 mΩ at 10 V gate drive and 25 A drain current, with a typical value of 2.94 mΩ. The component is qualified to the AEC-Q101 standard for automotive applications.

Feature Summary

Compliant with AEC-Q101 standards for high-performance automotive applications
Rated for repetitive avalanche operation to handle transient energy events
Designed for thermally demanding environments with a junction temperature rating up to 175 °C
Features a true standard level gate threshold that remains above 1 V even at elevated temperatures

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component version aligns with the latest product data sheet revisions to ensure compatibility with design specifications. Check for any pending Product Change Notifications regarding marking or assembly updates. Ensure storage and handling procedures comply with moisture sensitivity levels defined in the datasheet to prevent package damage during soldering processes.

Selection Notes

Select this component when designing circuits requiring robust automotive-grade reliability and high current handling capabilities. The low on-state resistance minimizes conduction losses in power switching applications. Consider the thermal resistance characteristics when determining heatsinking requirements for sustained operation. Verify that the gate drive voltage meets the standard level requirements to ensure optimal performance across the full operating temperature range.

Part Context

This part belongs to Nexperia's TrenchMOS family of N-channel enhancement mode field-effect transistors. The series is engineered for high efficiency and ruggedness in power management roles. The D2PAK package provides a large mounting base for effective heat dissipation, supporting the high power dissipation ratings necessary for demanding automotive and industrial power switching tasks.