BUK764R3-40B,118

$1.01

Description：MOSFET N-CH 40V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:9359e2aa23c1 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：69 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4.824 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：254W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK764R3-40B,118

Overview

The BUK764R3-40B is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK (SOT404) plastic package. Designed for automotive critical applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 40 V and a continuous drain current of 75 A at a mounting base temperature of 25 °C. The device exhibits a maximum on-state resistance of 4.3 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 254 W at 25 °C mounting base temperature, with a junction temperature range spanning from -55 °C to +175 °C.

Feature Summary

AEC-Q101 compliant for automotive critical applications
Low conduction losses due to low on-state resistance
Suitable for standard level gate drive sources
Operates in thermally demanding environments up to 175 °C

Applications

12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging and reel specifications. Confirm that the component matches the SOT404 D2PAK outline dimensions and pin configuration before integration. Ensure design safeguards account for the absolute maximum ratings defined in the datasheet to prevent permanent damage during operation.

Selection Notes

Select this component for high-current switching applications requiring robust avalanche ruggedness and low thermal resistance. The standard level gate drive compatibility simplifies driver circuit design. Verify that the required current handling and thermal management capabilities align with the system's power dissipation requirements and operating temperature constraints.

Part Context

This part belongs to the BUK76 series of N-channel TrenchMOS FETs manufactured by Nexperia. It is specifically engineered for automotive environments, offering enhanced reliability compared to general-purpose industrial components. The D2PAK package provides efficient heat dissipation through the mounting base connected to the drain.