BUK7675-100A,118

$1.21

Description：MOSFET N-CH 100V 23A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT),Bulk

SKU:0b0d15c63f5f Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 23A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT),Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：75mOhm @ 13A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1210 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：99W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK7675-100A,118

Overview

The BUK7675-100A is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 100 V and a continuous drain current of 23 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 187 mΩ at 175 °C junction temperature. Total power dissipation reaches 99 W at 25 °C. It supports non-repetitive avalanche energy of 100 mJ and operates within a junction temperature range of -55 °C to 175 °C.

Feature Summary

Low conduction losses due to low on-state resistance
Q101 compliant for automotive critical applications
Suitable for standard level gate drive sources
Operates in thermally demanding environments with a 175 °C rating

Applications

12 V, 24 V and 42 V loads
Automotive and general purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel configuration. Confirm the package variant corresponds to SOT404 (D2PAK). Check the latest product status on the manufacturer website as specifications may change. Ensure design compliance with absolute maximum ratings for thermal and electrical stress conditions before integration.

Selection Notes

Select this component for high-current switching applications requiring robust automotive qualification. The standard level gate drive compatibility simplifies driver circuit design. Evaluate thermal management requirements based on the 1.5 K/W junction-to-mounting-base thermal resistance. Consider the 175 °C operating limit for high-temperature environments.

Part Context

This part belongs to Nexperia's TrenchMOS standard level FET portfolio. It is designed for automotive critical applications meeting AEC-Q101 standards. The D2PAK package provides efficient heat dissipation for power switching tasks. It serves as a reliable solution for load control in vehicle electrical systems.

Replacement Considerations

Consult official Nexperia documentation for verified substitute part numbers. Cross-reference pinout configurations and thermal characteristics when evaluating alternatives. Ensure any replacement meets the same Q101 compliance and voltage/current ratings.