BUK7880-55A,115

$0.50

Description：MOSFET N-CH 55V 7A SOT-223
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:bdcba48217b9 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 7A SOT-223
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：80mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：500 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SC-73
Package / Case：TO-261-4, TO-261AA

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BUK7880-55A,115

Overview

The BUK7880-55A,115 is an N-channel TrenchMOS standard level FET designed for automotive critical applications. It features a 55 V drain-source voltage and supports a continuous drain current of 7 A at 25 °C solder point temperature. The device exhibits a typical on-state resistance of 68 mΩ at VGS = 10 V and ID = 10 A. Total power dissipation reaches 8 W under specified conditions. The component operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

Compliant with AEC Q101 standards for automotive reliability
Utilizes Nexperia General Purpose Automotive TrenchMOS technology
Optimized for low conduction losses through reduced on-state resistance

Applications

12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and marking code accuracy. Ensure design compliance with absolute maximum ratings, particularly regarding thermal resistance from junction to solder point. Confirm that application requirements align with the specified gate drive sources suitable for standard level operation.

Selection Notes

Select this component for circuits requiring robust N-channel switching in automotive environments. The SOT223 package provides increased heatsink capabilities compared to standard surface-mounted packages. Consider the 55 V rating and 7 A continuous current limits when designing load paths. Verify gate drive voltage compatibility with the standard level enhancement mode characteristics.

Part Context

This part belongs to the BUK7880 series of N-channel TrenchMOS FETs manufactured by Nexperia. The series utilizes advanced trench technology to achieve low on-state resistance. The BUK7880-55A specifically targets general-purpose automotive applications requiring reliable performance under varying thermal conditions.