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The BUK7909-75AIE is an N-channel TrenchPLUS standard level FET utilizing TrenchMOS technology. It features a 75 V drain-source voltage rating and a typical on-state resistance of 89 mΩ at 25 °C. The device supports a continuous drain current of 120 A at 25 °C mounting base temperature, limited to 75 A by package constraints. Integrated current sensing provides a drain-to-sense current ratio of 450 to 550. It includes built-in ESD protection diodes and is qualified to the AEC-Q101 standard for automotive applications.
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Select this component for high-current switching applications requiring integrated current monitoring. Ensure the design accommodates the TO-220 package thermal requirements, as continuous current is limited to 75 A due to package constraints despite higher chip ratings. Confirm gate drive compatibility with standard level sources.
This part belongs to Nexperia's TrenchPLUS family of N-channel MOSFETs designed for automotive environments. It combines standard level gate drive compatibility with advanced TrenchMOS technology to achieve low conduction losses. The inclusion of Kelvin source and dedicated sense pins distinguishes it from standard power MOSFETs by enabling precise current regulation without external shunts.
Check pinout compatibility, specifically the five-lead SOT263B configuration including the dedicated sense and Kelvin source terminals. Verify that substitute devices support the required 75 V rating and offer comparable on-state resistance and current sensing ratios.