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Product Detailed Parameters
- Description：MOSFET N-CH 40V 75A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：120 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4300 pF @ 25 V
- FET Feature：Current Sensing
- Power Dissipation (Max)：272W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
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Overview
The BUK7C06-40AITE,118 is an N-channel power MOSFET from Nexperia's TrenchMOS series. It features a drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 75 A at case temperature. The device offers a maximum on-resistance (Rds(on)) of 6 mΩ at Vgs = 10 V. Packaged in a D2PAK (TO-263-5) surface-mount housing, it supports a junction temperature range of -55°C to 175°C and is qualified to the AEC-Q101 automotive standard.
Feature Summary
- Automotive-grade reliability certified under AEC-Q101 standards for high-temperature operation up to 175°C.
- Utilizes TrenchMOS technology to achieve low conduction losses and high power density within the D2PAK package.
- Integrated thermal design facilitates efficient heat dissipation for high-current applications.
Applications
- 12 V automotive power distribution systems
- Motor control circuits for chassis and body electronics
- DC-DC converter modules in vehicle infotainment systems
Procurement Notes
Verify component authenticity through authorized Nexperia distributors or certified partners. Confirm that the specific suffix matches the required packaging format. Check for recent Product Change Notifications regarding label updates or assembly site changes. Ensure compliance with RoHS3 directives and REACH regulations for your target market. Validate lead times as availability may fluctuate based on production schedules.
Selection Notes
Select this component when designing for 40 V automotive environments requiring high current handling. The 75 A rating suits heavy-load switching tasks. Consider the D2PAK footprint for PCB layout constraints. Evaluate thermal management requirements given the 272 W power dissipation capability. Compare Rds(on) specifications against alternative packages if space is limited.
Part Context
This part belongs to Nexperia's broad portfolio of automotive-qualified discrete semiconductors. It complements other devices in the BUK7C series designed for robust performance in harsh electrical environments. The product line emphasizes durability and efficiency for modern vehicle architectures.
Replacement Considerations
Consult official Nexperia documentation for direct cross-references. Verify pinout compatibility and thermal characteristics before substituting. Ensure any alternative meets the same AEC-Q101 qualification level.
FAQ
What is the maximum gate-source voltage for this MOSFET?
The absolute maximum rating for the gate-source voltage (Vgs) is typically ±20 V, consistent with standard MOSFET specifications in this class.
Is this component suitable for high-frequency switching?
Yes, the low input capacitance and fast switching characteristics of the TrenchMOS technology make it suitable for various DC-DC conversion frequencies.
