ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 40V 120A I2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：118 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：9700 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：324W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Download product information
Overview
The BUK7E1R9-40E is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an I2PAK (SOT226) plastic single-ended package. Designed for high-performance automotive applications, it meets AEC-Q101 standards and supports junction temperatures up to 175 °C. Key electrical parameters include a drain-source voltage of 40 V, a continuous drain current of 120 A at 25 °C mounting base temperature, and a maximum total power dissipation of 324 W. The device features a typical on-state resistance of 1.5 mΩ at 25 °C and 10 V gate drive, with a peak pulsed drain current capability of 1198 A.
Feature Summary
- Automotive qualified to AEC-Q101 standard for high reliability
- Capable of operation in thermally demanding environments with a 175 °C rating
- Features true standard level gate characteristics with threshold voltage greater than 1 V at 175 °C
- Rated for repetitive avalanche energy handling
Applications
- 12 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and tape/reel specifications. Ensure the procurement channel provides valid traceability for AEC-Q101 qualified components. Confirm that the received units match the marking code 'BUK7E1R9-40E' as specified in the product data sheet to avoid counterfeit or mislabeled parts.
Selection Notes
Select this component when designing circuits requiring low on-state resistance and high current handling within a 40 V system. The I2PAK package offers robust thermal performance suitable for direct mounting to heatsinks. Consider the 175 °C junction temperature rating for applications operating in high ambient heat. Verify that the gate drive voltage aligns with the standard level requirements for optimal RDSon performance.
Part Context
This part belongs to the Nexperia BUK7E series of N-channel TrenchMOS FETs. It is specifically engineered for automotive-grade reliability, distinguishing it from general-purpose industrial MOSFETs through its AEC-Q101 qualification. The I2PAK (SOT226) package provides a balance between high current capacity and thermal efficiency, making it distinct from smaller surface-mount packages in the same family.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-referencing requires matching the SOT226 package, 40 V rating, and comparable RDSon values. Generic replacements may not meet the AEC-Q101 automotive qualification or the specific thermal characteristics defined in the datasheet.
