BUK7E5R2-100E,127

$1.25

Description：NEXPERIA BUK7E5R2-100E - 120A, 1
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:e2961f9c2694 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：NEXPERIA BUK7E5R2-100E - 120A, 1
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：5.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：180 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：11810 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：349W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：I2PAK
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

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BUK7E5R2-100E,127

Overview

The BUK7E5R2-100E is a standard level N-channel MOSFET utilizing TrenchMOS technology in an I2PAK (SOT226) package. It features a drain-source voltage of 100 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device has a maximum on-state resistance of 5.2 mΩ at 25 °C and 14 mΩ at 175 °C junction temperature, with a total power dissipation rating of 349 W. It supports a junction temperature range from -55 °C to +175 °C and includes repetitive avalanche capability.

Feature Summary

AEC Q101 compliant for automotive applications
Repetitive avalanche rated for ruggedness
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating greater than 1V at 175 °C

Applications

12V, 24V and 48V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the I2PAK (SOT226) package dimensions align with your PCB footprint requirements. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values under expected operating conditions.

Selection Notes

Select this component when high current handling up to 120 A and low on-state resistance are required in automotive or industrial settings. The true standard level gate simplifies driver design by maintaining threshold characteristics at elevated temperatures. Consider the I2PAK package size for adequate heat dissipation without excessive board space usage.

Part Context

This part belongs to Nexperia's BUK7E series of N-channel TrenchMOS standard level FETs. These devices are engineered for high-performance switching applications requiring robust avalanche ratings and high thermal stability. The series utilizes advanced trench technology to achieve low conduction losses while maintaining reliable operation in harsh automotive environments.

Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives within the BUK7E family or other compatible N-channel MOSFETs with matching voltage, current, and package specifications.