BUK7K134-100EX

$0.95

Description：MOSFET 2N-CH 100V 9.8A LFPAK56D
Series：-

SKU:afb88ce8c758 Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 100V 9.8A LFPAK56D
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：9.8A
Rds On (Max) @ Id, Vgs：121mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：564pF @ 25V
Power - Max：32W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-1205, 8-LFPAK56
Supplier Device Package：LFPAK56D
Grade：Automotive
Qualification：AEC-Q100

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BUK7K134-100EX

Overview

The BUK7K134-100EX is a dual N-channel MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) package. It features a drain-source voltage of 100 V and a continuous drain current of 9.8 A at 25 °C. The device exhibits a maximum on-state resistance of 121 mΩ at 10 V gate drive. Total power dissipation reaches 32 W, with junction temperatures supported up to 175 °C. Gate threshold voltage ranges from 1 V to 4.5 V depending on temperature conditions.

Feature Summary

AEC-Q101 qualified for automotive reliability standards
Repetitive avalanche rated for robust transient handling
True standard level gate operation exceeding 1 V threshold at elevated temperatures

Applications

12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific suffix 'EX' against the manufacturer's official ordering documentation to confirm packaging details such as reel specifications or tape dimensions. Confirm RoHS compliance status through the latest datasheet revision. Ensure the component matches the LFPAK56D footprint requirements for your PCB layout before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring dual N-channel isolation in a compact surface-mount form factor. The 175 °C thermal rating supports operation in thermally demanding environments. Verify that the 100 V breakdown voltage aligns with system rail voltages and that the 121 mΩ on-resistance meets efficiency targets under expected load currents.

Part Context

This device belongs to Nexperia's Dual Standard level MOSFET family designed for high-performance automotive applications. It employs TrenchMOS technology to achieve low on-state resistance within the LFPAK56D plastic single-ended surface-mounted package. The product is specifically engineered to meet AEC-Q101 qualification standards for automotive electronics.