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The BUK7K32-100EX is a dual N-channel MOSFET in an LFPAK56D (SOT1205) package using TrenchMOS technology. It features a drain-source voltage of 100 V and a continuous drain current of 29 A at 25 °C mounting base temperature. The maximum on-state resistance is 27.5 mΩ at VGS = 10 V and ID = 5 A. Total power dissipation reaches 64 W at 25 °C. The device supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 qualification status for your target automotive application. Cross-reference the pinning information and marking codes to prevent integration errors during assembly.
Select this component when a dual N-channel configuration is required for space-constrained automotive designs. The LFPAK56D package offers efficient thermal management for high-power applications. Ensure the gate drive circuitry aligns with the standard level gate requirements and the 10 V threshold characteristics specified in the datasheet.
This part belongs to Nexperia's BUK7K series of dual N-channel MOSFETs. These devices utilize TrenchMOS technology to achieve low on-state resistance and high switching efficiency. The series is specifically engineered for robust performance in automotive environments, providing reliable operation under varying thermal conditions.
BUK7K32-100E