BUK7K32-100EX

BUK7K32-100EX

$1.55
  • Description:MOSFET 2N-CH 100V 29A LFPAK56D
  • Series:-

SKU:5342d0a4ceb2 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 2N-CH 100V 29A LFPAK56D
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:29A
  • Rds On (Max) @ Id, Vgs:27.5mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2137pF @ 25V
  • Power - Max:64W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1205, 8-LFPAK56
  • Supplier Device Package:LFPAK56D
  • Grade:Automotive
  • Qualification:AEC-Q100

Download product information

BUK7K32-100EX

Overview

The BUK7K32-100EX is a dual N-channel MOSFET in an LFPAK56D (SOT1205) package using TrenchMOS technology. It features a drain-source voltage of 100 V and a continuous drain current of 29 A at 25 °C mounting base temperature. The maximum on-state resistance is 27.5 mΩ at VGS = 10 V and ID = 5 A. Total power dissipation reaches 64 W at 25 °C. The device supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

  • Dual MOSFET configuration within a single surface-mounted package
  • Qualified for high performance automotive applications under AEC Q101 standard
  • Capable of withstanding thermally demanding environments with a 175 °C rating
  • Features true standard level gate operation with threshold voltage greater than 1 V at 175 °C

Applications

  • 12 V, 24 V and 48 V Automotive systems
  • Motors, lamps and solenoid control
  • Transmission control
  • Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 qualification status for your target automotive application. Cross-reference the pinning information and marking codes to prevent integration errors during assembly.

Selection Notes

Select this component when a dual N-channel configuration is required for space-constrained automotive designs. The LFPAK56D package offers efficient thermal management for high-power applications. Ensure the gate drive circuitry aligns with the standard level gate requirements and the 10 V threshold characteristics specified in the datasheet.

Part Context

This part belongs to Nexperia's BUK7K series of dual N-channel MOSFETs. These devices utilize TrenchMOS technology to achieve low on-state resistance and high switching efficiency. The series is specifically engineered for robust performance in automotive environments, providing reliable operation under varying thermal conditions.

Replacement Considerations

BUK7K32-100E

BUK7K32-100EXBUK7K32-100EX
$1.55
Buy Now