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The BUK7K52-60EX is a dual N-channel MOSFET utilizing TrenchMOS technology in an LFPAK56D (SOT1205) package. It features a 60 V drain-source voltage rating and a maximum continuous drain current of 15.4 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 35 mΩ and a total gate charge of 9.2 nC. Designed for high-performance automotive applications, it supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Verify the specific ordering suffix against official Nexperia documentation to confirm tape and reel specifications. Ensure the component matches the LFPAK56D package outline SOT1205. Confirm that the marking code corresponds to the designated type number before integration into production designs.
Select this component for designs requiring dual channel isolation within a compact surface mount footprint. The standard level gate threshold ensures compatibility with common logic drivers while maintaining robust performance at elevated junction temperatures suitable for automotive thermal profiles.
This part belongs to the Nexperia BUK7K series of dual MOSFETs. It employs TrenchMOS technology to achieve low on-state resistance within the LFPAK56D plastic single-ended surface mounted package. The series is engineered specifically for high reliability in automotive electronic control units and power distribution networks.
BUK7K52-60E