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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 40A LFPAK56D
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：40A
- Rds On (Max) @ Id, Vgs：5.1mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：31.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2352pF @ 25V
- Power - Max：68W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-1205, 8-LFPAK56
- Supplier Device Package：LFPAK56D
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BUK7K5R1-30E is a dual N-channel standard level MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) package. It features a drain-source voltage of 30 V and a continuous drain current of 40 A at 25 °C mounting base temperature. The typical on-state resistance is 5.1 mΩ at VGS = 10 V and ID = 10 A. Total power dissipation reaches 68 W under specified conditions, with a junction temperature range spanning -55 °C to +175 °C.
Feature Summary
- Qualified to AEC-Q101 standards for high-performance automotive applications
- Capable of operation in thermally demanding environments up to 175 °C
- Features true standard level gate characteristics with threshold voltage greater than 1 V at maximum operating temperature
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging configuration and marking codes. Ensure that the component meets the required AEC-Q101 qualification status for the intended automotive application environment before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits requiring low conduction losses and robust thermal performance in compact surface-mount layouts. The dual configuration supports efficient bridge or parallel switching topologies. Confirm that the gate drive voltage aligns with the standard level requirements for optimal RDS(on) performance across the full operating temperature range.
Part Context
This device belongs to the Nexperia BUK7K series of dual N-channel MOSFETs designed for automotive-grade reliability. It employs TrenchMOS technology to achieve low on-resistance and fast switching speeds within the LFPAK56D package, which provides enhanced thermal dissipation capabilities compared to traditional plastic packages.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-referencing requires matching voltage ratings, current capabilities, package dimensions, and thermal characteristics to ensure functional compatibility without redesigning the PCB footprint.
