BUK7K6R8-40E/1X

Overview

The BUK7K6R8-40E is a dual N-channel standard level MOSFET utilizing TrenchMOS technology, housed in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 40 V and a continuous drain current of 40 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 6.8 mΩ at 10 V gate drive and 20 A drain current. Total power dissipation reaches 64 W under specified thermal conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

• Dual MOSFET configuration within a single surface-mounted package
• Qualified for high-performance automotive applications per AEC-Q101 standards
• Capable of withstanding thermally demanding environments with a 175 °C junction temperature rating
• Features true standard level gate operation with threshold voltage exceeding 1 V at elevated temperatures

Applications

• 12 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging format and reel specifications. Confirm that the requested part number matches the exact electrical characteristics and pinout defined in the product data sheet. Ensure compliance with RoHS directives and check for any recent product change notices affecting availability or material composition prior to finalizing procurement orders.

Selection Notes

Select this component for designs requiring dual independent N-channel switches in a compact footprint. The low on-state resistance minimizes conduction losses in power switching applications. Verify that the gate drive voltage aligns with the standard level requirements for optimal performance. Consider the thermal resistance characteristics when designing heat dissipation strategies for the LFPAK56D package.

Part Context

This device belongs to Nexperia's standard level MOSFET portfolio, designed specifically for automotive and industrial power management. The integration of two channels in one package reduces board space compared to discrete solutions. The use of TrenchMOS technology provides improved switching performance and lower internal resistance relative to conventional planar structures.

Replacement Considerations

Consult the manufacturer's cross-reference guide for verified substitutes. Ensure replacement parts match the LFPAK56D package dimensions and pin assignments. Verify that alternative components meet the same AEC-Q101 qualification and 175 °C operating temperature ratings.