BUK7K6R8-40E,115

$1.68

Description：MOSFET 2N-CH 40V 40A LFPAK56D
Series：TrenchMOS™

SKU:b1bbde16a31a Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 40A LFPAK56D
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：40A
Rds On (Max) @ Id, Vgs：6.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：28.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1947pF @ 25V
Power - Max：64W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-1205, 8-LFPAK56
Supplier Device Package：LFPAK56D
Grade：Automotive
Qualification：AEC-Q101

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BUK7K6R8-40E,115

Overview

The BUK7K6R8-40E,115 is a dual N-channel MOSFET utilizing TrenchMOS technology in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 40 V and a continuous drain current of 40 A at 25 °C mounting base temperature. The typical on-state resistance is 6.8 mΩ at VGS = 10 V and ID = 20 A. Total power dissipation reaches 64 W under specified conditions. The device supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

Dual standard level N-channel configuration within a single surface-mounted package
Qualified to AEC-Q101 automotive standards for high-performance applications
Capable of operating in thermally demanding environments with a 175 °C junction temperature rating
Features true standard level gate characteristics with threshold voltage greater than 1 V at maximum temperature

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or cut tape specifications. Ensure the component meets the required AEC-Q101 qualification status for the intended automotive application environment. Cross-reference the marking code 76E840 with the datasheet to authenticate the physical device upon receipt.

Selection Notes

Select this component when a dual N-channel solution is required for 40 V automotive circuits. The LFPAK56D package provides efficient thermal management suitable for high-power density designs. Consider the 6.8 mΩ on-resistance for conduction loss calculations and verify that the gate drive voltage aligns with the standard level gate requirements for optimal performance.

Part Context

This device belongs to the Nexperia BUK7K series of dual MOSFETs designed for automotive use. It employs TrenchMOS technology to achieve low on-resistance and fast switching speeds. The LFPAK56D package offers a compact footprint with enhanced thermal dissipation compared to traditional plastic packages, supporting reliable operation in space-constrained automotive electronics.