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The BUK7K89-100E is a dual N-channel standard level MOSFET utilizing TrenchMOS technology, housed in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 100 V and a typical on-state resistance of 82.5 mΩ at 25 °C. The device supports a continuous drain current of 13 A and total power dissipation of 38 W at 25 °C mounting base temperature. It operates up to a junction temperature of 175 °C with a threshold voltage exceeding 1 V at this maximum temperature.
Verify the specific ordering suffix matches the required tape-and-reel quantity and packaging variant. Confirm that the component version aligns with the most recent product data sheet revision. Ensure the marking code corresponds to the exact type number to prevent counterfeit substitution during assembly.
Select this component when a compact dual-switch solution is required for automotive environments. The LFPAK56D package provides efficient thermal management for thermally demanding conditions. Verify that the 100 V rating and 82.5 mΩ on-resistance meet the specific circuit load requirements.
This part belongs to Nexperia's Dual Standard level N-channel MOSFET family based on TrenchMOS technology. It shares the LFPAK56D package form factor with other dual devices in the series but is distinguished by its specific 100 V breakdown voltage and associated electrical characteristics designed for automotive-grade reliability.
Direct substitutes include other Nexperia dual N-channel MOSFETs in the SOT1205 package with matching 100 V ratings. Cross-manufacturer replacements require verification of pinout compatibility, thermal resistance values, and avalanche ruggedness specifications.