BUK7K89-100E/1X

BUK7K89-100E/1X

  • Description:MOSFET 100V 13A LFPAK56D
  • Series:-

SKU:99b897946b4d Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 100V 13A LFPAK56D
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Bulk
  • Technology:-
  • Configuration:-
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:13A (Ta)
  • Rds On (Max) @ Id, Vgs:82.5mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:13.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:811pF @ 25V
  • Power - Max:38W (Ta)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1205, 8-LFPAK56
  • Supplier Device Package:LFPAK56D
  • Grade:Automotive
  • Qualification:AEC-Q101

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BUK7K89-100E/1X

Overview

The BUK7K89-100E is a dual N-channel standard level MOSFET utilizing TrenchMOS technology, housed in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 100 V and a typical on-state resistance of 82.5 mΩ at 25 °C. The device supports a continuous drain current of 13 A and total power dissipation of 38 W at 25 °C mounting base temperature. It operates up to a junction temperature of 175 °C with a threshold voltage exceeding 1 V at this maximum temperature.

Feature Summary

  • Dual MOSFET configuration within a single surface-mounted package
  • Qualified for high-performance automotive applications per AEC-Q101 standards
  • Rated for repetitive avalanche energy operation
  • Maintains true standard level gate functionality with a threshold voltage greater than 1 V at 175 °C

Applications

  • 12 V, 24 V and 48 V Automotive systems
  • Motors, lamps and solenoid control
  • Transmission control
  • Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix matches the required tape-and-reel quantity and packaging variant. Confirm that the component version aligns with the most recent product data sheet revision. Ensure the marking code corresponds to the exact type number to prevent counterfeit substitution during assembly.

Selection Notes

Select this component when a compact dual-switch solution is required for automotive environments. The LFPAK56D package provides efficient thermal management for thermally demanding conditions. Verify that the 100 V rating and 82.5 mΩ on-resistance meet the specific circuit load requirements.

Part Context

This part belongs to Nexperia's Dual Standard level N-channel MOSFET family based on TrenchMOS technology. It shares the LFPAK56D package form factor with other dual devices in the series but is distinguished by its specific 100 V breakdown voltage and associated electrical characteristics designed for automotive-grade reliability.

Replacement Considerations

Direct substitutes include other Nexperia dual N-channel MOSFETs in the SOT1205 package with matching 100 V ratings. Cross-manufacturer replacements require verification of pinout compatibility, thermal resistance values, and avalanche ruggedness specifications.

BUK7K89-100E/1XBUK7K89-100E/1X

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