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Product Detailed Parameters
- Description：MOSFET N-CH 60V 53A LFPAK33
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：24.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1625 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：75W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK33
- Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)
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Overview
The BUK7M12-60EX is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK33 (SOT1210) surface-mount package. It features a drain-source voltage of 60 V and a continuous drain current of 53 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 12 mΩ at 25 °C and 27 mΩ at 175 °C junction temperature. Total power dissipation reaches 75 W under specified conditions. It supports a junction temperature range from -55 °C to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Compliant with the AEC-Q101 automotive qualification standard for high-performance applications.
- Features true standard level gate characteristics with a threshold voltage exceeding 1 V at 175 °C.
- Capable of operating in thermally demanding environments due to a 175 °C maximum junction temperature rating.
- Rated for repetitive avalanche energy to withstand transient electrical stress.
Applications
- 12 V automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging and reel specifications. Confirm that the component meets all required automotive reliability standards for the intended deployment environment. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values provided in the datasheet.
Selection Notes
Select this component when a single N-channel MOSFET with low on-resistance and high current capability is required for 12 V automotive circuits. The LFPAK33 package offers efficient thermal dissipation through the exposed mounting base. Consider the repetitive avalanche rating if the application involves inductive load switching or potential voltage spikes.
Part Context
This part belongs to the BUK7M series of N-channel enhancement mode MOSFETs manufactured by Nexperia. The series utilizes TrenchMOS technology to achieve low specific on-resistance. The LFPAK33 package provides a compact footprint suitable for space-constrained printed circuit board layouts while maintaining robust thermal performance for power switching applications.
Replacement Considerations
Consult official Nexperia cross-reference lists for verified substitutes. Ensure any replacement maintains compatibility with the LFPAK33 (SOT1210) package dimensions and pin configuration.
