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Product Detailed Parameters
- Description：MOSFET N-CH 40V 19A LFPAK33
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：45mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：6.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：317 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：31W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK33
- Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)
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Overview
The Nexperia BUK7M45-40EX is an N-channel standard level MOSFET utilizing TrenchMOS technology, housed in an LFPAK33 (SOT1210) surface-mount package. It features a drain-source voltage of 40 V and a continuous drain current of 19 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 45 mΩ at VGS = 10 V and ID = 5 A. Total power dissipation reaches 31 W under specified conditions. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified to AEC-Q101 automotive standards for high-performance applications
- Operates reliably in thermally demanding environments with a 175 °C junction temperature rating
- Features true standard level gate characteristics with threshold voltage greater than 1 V at elevated temperatures
- Rated for repetitive avalanche energy to withstand transient electrical stresses
Applications
- 12 V automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific suffix 'EX' against the manufacturer's official ordering information to confirm packaging details such as reel specifications or tape-and-reel dimensions. Ensure the component matches the LFPAK33 package outline SOT1210. Confirm that the marking code corresponds to the designated type number before finalizing procurement orders.
Selection Notes
Select this component for circuits requiring robust automotive-grade reliability and thermal stability. The LFPAK33 package offers enhanced thermal performance compared to standard plastic packages. Verify that the gate drive voltage aligns with the standard level requirements to ensure optimal on-state resistance and switching efficiency within the intended operating temperature range.
Part Context
This device belongs to Nexperia's portfolio of automotive-qualified power MOSFETs designed for demanding environments. The LFPAK33 package provides a compact solution with improved heat dissipation capabilities. It utilizes TrenchMOS technology to achieve low conduction losses while maintaining high ruggedness against electrical overstress events common in automotive power distribution networks.
Replacement Considerations
Consult official Nexperia documentation for qualified alternative part numbers within the same family or package type. Ensure any substitute maintains compatibility with the LFPAK33 footprint and meets the required AEC-Q101 qualification status for automotive integration.
