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The BUK7S0R7-40HJ is an automotive qualified N-channel MOSFET utilizing Trench 9 low ohmic superjunction technology within a copper-clip LFPAK88 package. It features a drain-source voltage of 40 V and a maximum on-state resistance of 0.7 mΩ at 25 °C. The device supports a continuous drain current of 425 A and total power dissipation of 375 W at 25 °C mounting base temperature. It operates across a junction temperature range of -55 °C to +175 °C with a thermal resistance from junction to mounting base of 0.4 K/W maximum.
Verify the specific ordering suffix J against the manufacturer's official documentation to confirm packaging details and compliance status. Ensure the component meets the required automotive qualification standards for the intended application environment. Cross-reference the marking code 7S0R740H with the datasheet to validate authenticity upon receipt.
Select this component for applications requiring ultra-low on-state resistance and high current handling in space-constrained automotive designs. The LFPAK88 package is suitable where improved power density and thermal efficiency are critical compared to older wire bond packages. Consider the tight threshold voltage limits if paralleling multiple devices is necessary for higher current capacity.
This part belongs to the Nexperia BUK7S series of N-channel MOSFETs, which utilize advanced Trench 9 superjunction technology. The series is designed for automotive applications, offering robust performance under high thermal stress. The LFPAK88 package variant provides significant advantages in thermal resistance and current spreading over traditional D²PAK packages.
Direct substitutes include other BUK7S series parts with similar RDS(on) and voltage ratings, such as BUK7S1R2-40H or BUK7S1R5-40H, provided the package and electrical specifications align with the design requirements. Verify compatibility with existing PCB footprints and thermal management solutions.