BUK7S0R9-40HJ

Overview

The BUK7S0R9-40HJ is an automotive qualified N-channel MOSFET utilizing Trench 9 low ohmic superjunction technology within a copper-clip LFPAK88 package. It meets beyond AEC-Q101 requirements for high performance and reliability. Key electrical parameters include a drain-source voltage (VDS) of 40 V, a continuous drain current (ID) of 375 A at 25 °C mounting base temperature, and a maximum total power dissipation (Ptot) of 375 W. The device features a typical drain-source on-state resistance (RDSon) of 0.73 mΩ at VGS = 10 V and ID = 25 A. It operates with a junction temperature range from -55 °C to +175 °C.

Feature Summary

• LFPAK88 package design provides smaller footprint and improved power density compared to older wire bond packages like D²PAK.
• Copper clip technology enables increased maximum current capability, excellent current spreading, and low thermal resistance.
• Trench 9 superjunction technology reduces cell pitch to achieve lower RDSon in the same footprint while improving SOA and avalanche capability.
• Flexible gull wing leads absorb mechanical and thermal cycling stress, ensuring high board level reliability without requiring x-ray inspection.

Applications

• 12 V automotive systems
• 48 V DC/DC systems on 12 V secondary side
• Higher power motors, lamps and solenoid control
• Reverse polarity protection
• LED lighting

Procurement Notes

Verify that the specific ordering suffix matches the required package variant and marking code. Confirm the component status as production data sheet information before initiating designs. Ensure compatibility with the specified LFPAK88 footprint dimensions and soldering stencil thickness guidelines provided in the datasheet. Cross-reference the part number against the latest Nexperia product availability updates.

Selection Notes

Select this component for space-constrained high-power automotive applications requiring superior thermal efficiency. The tight VGS(th) limits facilitate easy paralleling of multiple MOSFETs for higher current handling. Evaluate the PCB thermal design constraints, as practical current limits are often determined by the board layout rather than the device's absolute maximum ratings.

Part Context

This device belongs to the BUK7S series of automotive qualified N-channel MOSFETs. It represents the application of Trench 9 superjunction technology specifically engineered for 40 V standard level gate drive requirements. The LFPAK88 package serves as a modern alternative to legacy wire-bonded packages, offering enhanced current spreading and reduced source inductance for ultra-high performance power switching.

Replacement Considerations

Direct substitutes within the same family include BUK7S1R5-40H and BUK7Y2R0-40H. Verify pinout compatibility and thermal resistance specifications when transitioning between different RDSon variants or package technologies such as LFPAK56.