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The BUK7S1R5-40HJ is an automotive qualified N-channel MOSFET utilizing Trench 9 superjunction technology in a copper-clip LFPAK88 (SOT1235) package. It features a drain-source voltage of 40 V and a maximum continuous drain current of 260 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 1.24 mΩ at 25 °C, rising to 2.69 mΩ at 175 °C. Total power dissipation reaches 242 W under specified conditions. Thermal resistance from junction to mounting base is typically 0.54 K/W. Gate charge is typically 67 nC, with a threshold voltage range of 1 V to 3.6 V.
Verify the specific ordering suffix 'J' against the manufacturer's official documentation to confirm packaging details, as datasheets may list standard variants without suffix specifications. Confirm RoHS compliance status and REACH SVHC declarations directly from the latest product database or chemical content reports provided by Nexperia before finalizing procurement orders.
Select this component for high-power density automotive designs requiring robust thermal performance. The LFPAK88 package offers a smaller footprint compared to older wire bond packages like D²PAK. Ensure PCB thermal design supports the 260 A capability, as practical limits depend on board layout. The tight threshold voltage limits facilitate easy paralleling of multiple devices for higher current applications.
This device belongs to Nexperia's BUK7S series of automotive qualified N-channel MOSFETs. It utilizes the company's proprietary Trench 9 low ohmic superjunction technology. The LFPAK88 package is designed specifically for space-constrained, high-power automotive applications, replacing traditional wire bond packages to improve power density and thermal management capabilities.
BUK7S1R5-40H