ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 30V 67A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：18.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1183 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：85W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
Download product information
Overview
The BUK7Y10-30B is a standard level N-channel enhancement mode Field-Effect Transistor utilizing Nexperia's High-Performance Automotive TrenchMOS technology. It features a drain-source voltage of 30 V and a continuous drain current of 67 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 10 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 85 W with a mounting base temperature of 25 °C. The component supports junction temperatures up to 175 °C and includes an integrated source-drain diode.
Feature Summary
- Qualified for automotive critical applications in compliance with AEC-Q101 standards
- Compatible with standard level gate drive sources
- Designed for thermally demanding environments with a 175 °C rating
Applications
- 12 V Loads
- Automotive systems
- General purpose power switch
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and tape-and-reel specifications. Confirm that the requested part number matches the exact electrical characteristics required for the target application. Ensure compatibility with the SOT669 (LFPAK) footprint during PCB layout. Cross-reference the latest datasheet revision to validate thermal and switching parameters before finalizing procurement.
Selection Notes
Select this component for circuits requiring robust performance in automotive environments where standard gate drive voltages are utilized. The low on-state resistance minimizes conduction losses in high-current paths. Verify that the system's thermal management can support the specified power dissipation limits. Ensure the operating voltage remains within the 30 V drain-source rating to prevent breakdown.
Part Context
This device belongs to the BUK7Y series of N-channel TrenchMOS FETs designed by Nexperia. The series utilizes HPA TrenchMOS technology to achieve high reliability and performance suitable for automotive use. The BUK7Y10-30B specifically targets applications requiring 30 V blocking capability and high current handling in a compact surface-mount package.
Replacement Considerations
Consult official Nexperia substitution guides or distributor cross-reference tools for verified equivalent parts. Do not assume functional interchangeability based solely on package similarity or generic voltage ratings. Verify that any substitute meets the same AEC-Q101 qualification and thermal requirements.
