BUK7Y102-100B,115

Overview

The BUK7Y102-100B,115 is a standard level N-channel enhancement mode Field-Effect Transistor (FET) utilizing Nexperia High-Performance Automotive (HPA) TrenchMOS technology. It features a drain-source voltage of 100 V and a continuous drain current of 15 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 102 mΩ at VGS = 10 V and ID = 5 A. Total power dissipation reaches 60 W at 25 °C. The gate-source threshold voltage ranges from 2 V to 4 V at 25 °C. Total gate charge is typically 12.2 nC at VDS = 80 V and VGS = 10 V. The component operates within a junction temperature range of -55 °C to +175 °C.

Feature Summary

• Compliant with AEC-Q101 automotive qualification standards for critical applications.
• Compatible with standard level gate drive sources for simplified circuit design.
• Engineered for thermally demanding environments with a 175 °C junction temperature rating.

Applications

• 12 V, 24 V and 42 V loads
• Automotive systems
• DC-to-DC converters
• General purpose power switching
• Solenoid drivers

Procurement Notes

Verify the complete part number including the trailing suffix against official Nexperia documentation to ensure correct packaging configuration. Confirm that the specific revision of the product data sheet matches the manufacturing date code. Ensure compatibility with the intended thermal management solution given the LFPAK package characteristics. Validate that the application environment remains within the specified absolute maximum ratings.

Selection Notes

Select this component when an N-channel MOSFET with 100 V breakdown and 15 A continuous current capability is required in an SMD plastic package. The standard level gate drive suitability allows direct interfacing with common logic or driver outputs without complex level shifting. Consider the 175 °C operating limit for high-temperature automotive or industrial enclosures where thermal dissipation is managed via the mounting base.

Part Context

This device belongs to the BUK7Y series of N-channel TrenchMOS FETs designed by Nexperia. The series utilizes HPA technology to meet automotive reliability requirements. The BUK7Y102 variant specifically targets 100 V applications. It is housed in the SOT669 (LFPAK) surface-mounted package, which provides low thermal resistance through a dedicated mounting base connected to the drain terminal.

Replacement Considerations

Consult the official Nexperia cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence based solely on voltage and current ratings. Verify pinout compatibility and thermal resistance specifications before substituting.

FAQ

Is the BUK7Y102-100B suitable for unclamped inductive switching?

Yes, the datasheet specifies non-repetitive drain-source avalanche energy capabilities, allowing operation under unclamped inductive load conditions within specified limits.

What is the maximum gate-source voltage allowed?

The absolute maximum rating for gate-source voltage is ±20 V.