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Product Detailed Parameters
- Description：MOSFET N-CH 100V 12A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：113mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：10.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：601 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：45W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK7Y113-100EX is a standard level N-channel MOSFET utilizing TrenchMOS technology in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 100 V and a maximum on-state resistance of 113 mΩ at 25 °C. The device supports a continuous drain current of 12 A at a mounting base temperature of 25 °C, with a total power dissipation rating of 45 W under the same conditions. It includes repetitive avalanche ratings and operates up to a junction temperature of 175 °C.
Feature Summary
- Qualified for high-performance automotive applications according to the AEC-Q101 standard.
- Capable of handling thermally demanding environments due to a 175 °C operating temperature rating.
- Features true standard level gate drive compatibility with a threshold voltage exceeding 1 V at elevated temperatures.
Applications
- 12 V, 24 V, and 48 V automotive systems
- Motor, lamp, and solenoid control
- Transmission control
- Ultra-high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or cut tape specifications. Confirm that the component meets the required AEC-Q101 qualification standards for your target application environment. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values provided in the datasheet.
Selection Notes
Select this component when designing circuits requiring robust automotive-grade reliability and high thermal stability. The standard level gate drive simplifies interface requirements with common logic drivers. Evaluate the repetitive avalanche energy capabilities if the application involves inductive load switching or potential voltage spikes.
Part Context
This part belongs to the BUK7Y series of N-channel MOSFETs from Nexperia. These devices are engineered using High-Performance Automotive TrenchMOS technology. The series is specifically designed to meet the rigorous demands of modern automotive electronics, offering a balance of low on-resistance and high thermal endurance within compact surface-mount packages.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout configurations and thermal characteristics carefully when considering equivalent components from other manufacturers to ensure mechanical and electrical compatibility.
