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The BUK7Y25-80EX is an N-channel standard level MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power-SO8) surface-mount package. It features a drain-source voltage of 80 V and a continuous drain current of 39 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 25 mΩ at 10 V gate drive. Total power dissipation reaches 95 W under specified conditions. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the component meets the required AEC-Q101 qualification status for your target application. Cross-reference the pinning configuration with your PCB layout to match the LFPAK56 outline. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values provided in the datasheet.
Select this component when designing circuits requiring robust automotive-grade N-channel switching with low on-resistance. The LFPAK56 package offers efficient thermal dissipation suitable for power densities up to 95 W. Consider the 80 V breakdown voltage and 39 A current capability for load management. Verify gate drive requirements align with the standard level gate threshold specifications across the operating temperature range.
This device belongs to Nexperia's TrenchMOS family of power MOSFETs. It is designed specifically for automotive electronics where reliability and thermal stability are critical. The LFPAK56 package provides a compact footprint with enhanced heat transfer through the exposed mounting base. It serves as a solution for high-current switching tasks in vehicle electrical architectures.
Consult the official Nexperia replacement guide or datasheet cross-reference section for verified substitute part numbers. Do not assume functional equivalence based solely on package type or voltage ratings. Verify that any alternative component matches the specific AEC-Q101 qualification and thermal characteristics required for the design.
Yes, the product has been designed and qualified to the AEC-Q101 standard for use in high-performance automotive applications.
The device is rated for a maximum junction temperature of 175 °C, making it suitable for thermally demanding environments.
Yes, the MOSFET is repetitively avalanche rated, allowing it to handle specific avalanche energy conditions as defined in the datasheet.