BUK7Y29-40EX

$0.84

Description：MOSFET N-CH 40V 26A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:da9a88d16b3a Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 26A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：29mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：7.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：492 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：37W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

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BUK7Y29-40EX

Overview

The BUK7Y29-40EX is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 40 V and a continuous drain current of 26 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 29 mΩ at VGS = 10 V and ID = 5 A. Total power dissipation reaches 37 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

Compliant with AEC-Q101 automotive standards for high-performance applications
Capable of operating in thermally demanding environments with a 175 °C rating
Features true standard level gate drive with threshold voltage greater than 1 V at 175 °C
Includes repetitive avalanche rating for robust switching performance

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the requested part number matches the exact electrical characteristics and thermal requirements defined in the product data sheet before finalizing procurement orders.

Selection Notes

Select this component for designs requiring standard level gate drive compatibility and high thermal stability. Ensure the application circuit accounts for the 40 V drain-source voltage limit and the 26 A continuous current capability at the expected mounting base temperature. Verify that the gate drive voltage aligns with the standard level threshold characteristics for optimal switching efficiency.

Part Context

This device belongs to Nexperia's TrenchMOS family, designed specifically for automotive critical applications. It integrates silicon technology within a plastic surface-mounted package to provide reliable power switching. The LFPAK56 package offers enhanced thermal performance compared to traditional packages, supporting the device's high-power dissipation ratings.

Replacement Considerations

Consult the official Nexperia replacement guide or distributor cross-reference lists for verified substitute part numbers. Do not assume functional equivalence based solely on package type or nominal voltage ratings without verifying all electrical parameters against the original specification.