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Product Detailed Parameters
- Description：MOSFET N-CH 100V 30A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：29mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：30.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1720 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：95W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK7Y38-100EX is an N-channel standard level MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 100 V and a continuous drain current of 30 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 38 mΩ at 25 °C and 105 mΩ at 175 °C. Total power dissipation reaches 95 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified for high-performance automotive applications in compliance with the AEC-Q101 standard.
- Capable of operation in thermally demanding environments due to a 175 °C junction temperature rating.
- Features true standard level gate drive characteristics with a threshold voltage greater than 1 V at elevated temperatures.
Applications
- 12 V, 24 V and 48 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to ensure correct packaging configuration. Confirm that the requested variant matches the LFPAK56 package type and lead-free specifications defined in the product data sheet. Cross-reference the marking code 73810E with physical samples to validate authenticity and production batch details prior to integration.
Selection Notes
Select this component for designs requiring robust automotive-grade reliability and high thermal performance. The standard level gate drive simplifies driver circuit requirements while maintaining efficiency. Ensure the application respects the absolute maximum ratings for drain current and power dissipation, particularly when operating at elevated mounting base temperatures where derating is necessary.
Part Context
This device belongs to the BUK7Y series of N-channel MOSFETs manufactured by Nexperia. It employs High-Performance Automotive TrenchMOS technology to deliver optimized switching performance and low conduction losses. The LFPAK56 package provides enhanced thermal conductivity compared to traditional plastic packages, supporting higher power density in compact PCB layouts.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics against the original datasheet specifications.
