BUK7Y59-60EX

$0.45

Description：MOSFET N-CH 60V 17A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:25e13f4b06ed Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 17A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：7.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：494 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：37W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

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BUK7Y59-60EX

Overview

The BUK7Y59-60EX is an N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 60 V and a continuous drain current of 17 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 59 mΩ at 25 °C and supports a total power dissipation of 37 W under the same conditions. It operates within a junction temperature range of -55 °C to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

Compliant with AEC-Q101 automotive standards for high-performance applications
Rated for repetitive avalanche energy handling
Maintains true standard level gate threshold above 1 V at elevated temperatures

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix 'EX' against official Nexperia documentation to confirm reel packaging specifications. Ensure the component matches the LFPAK56 physical outline and SOT669 variant requirements for your PCB layout. Confirm that the application environment remains within the specified thermal and electrical limits defined in the product data sheet.

Selection Notes

Select this component for designs requiring robust automotive-grade reliability and high thermal stability up to 175 °C. The standard level gate drive simplifies interface requirements while maintaining low conduction losses. Evaluate the repetitive avalanche capability if the circuit experiences inductive load switching or transient voltage spikes exceeding normal operating levels.

Part Context

This part belongs to Nexperia's standard level N-channel MOSFET portfolio designed for automotive use. It employs TrenchMOS technology to achieve low on-resistance within the compact LFPAK56 package. The device is qualified to AEC-Q101 standards, ensuring suitability for demanding automotive environments where thermal management and ruggedness are critical design factors.

Replacement Considerations

Direct substitutes include other Nexperia parts within the BUK7Y series sharing identical pinouts and electrical characteristics. Verify compatibility by comparing package dimensions, thermal resistance values, and maximum ratings against the original specification requirements before implementation.