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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：32 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：3519 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：167W (Tc)
- Operating Temperature：-55°C ~ 185°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK9212-55B,118 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a DPAK (SOT428) plastic package. It features a drain-source voltage of 55 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 10.2 mΩ at VGS=5V and 8.1 mΩ at VGS=10V. Total power dissipation reaches 167 W at 25 °C. It supports junction temperatures up to 185 °C and includes avalanche ruggedness with non-repetitive energy handling of 173 mJ.
Feature Summary
- AEC Q101 compliant for automotive critical applications
- Low conduction losses due to low on-state resistance
- Suitable for logic level gate drive sources
- Operates in thermally demanding environments with 185 °C rating
Applications
- 12 V and 24 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix matches the required tape and reel quantity configuration. Confirm the component status against the latest Nexperia product data sheet to ensure availability and compliance with current manufacturing standards before finalizing procurement plans.
Selection Notes
Select this component for designs requiring high current handling in a surface-mount DPAK package. Ensure the gate drive circuit provides sufficient voltage to achieve the specified low on-resistance values. Verify thermal management strategies accommodate the 185 °C maximum junction temperature capability.
Part Context
This part belongs to the Nexperia BUK9 series of N-channel TrenchMOS logic level FETs. These devices are engineered for robust performance in automotive and industrial environments, combining high current density with efficient switching characteristics suitable for power management applications.
Replacement Considerations
Check for direct substitutes within the BUK9 series or equivalent DPAK packages from other manufacturers. Ensure pinout compatibility and verify that electrical parameters such as RDS(on) and VDS meet or exceed the original specifications.
