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Product Detailed Parameters
- Description：MOSFET N-CH 30V 55A DPAK
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：37 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：2852 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：150W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK9213-30A is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a DPAK plastic package. Designed for automotive critical applications, it features a drain-source voltage of 30 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device supports a total power dissipation of 150 W and operates with junction temperatures up to 175 °C. It includes avalanche ruggedness rated at 467 mJ and exhibits low on-state resistance characteristics suitable for efficient power switching.
Feature Summary
- Logic level gate drive compatibility
- Automotive qualification compliant with AEC Q101 standards
- High thermal capability supporting 175 °C operation
Applications
- 12 V load management
- Automotive power switching
- General purpose power switching
- Motor control circuits
- Lamp and solenoid driving
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm the product lifecycle stage as specifications may change. Ensure design inputs match the absolute maximum ratings provided in the datasheet. Validate thermal management requirements against the specified junction-to-mounting base resistance values.
Selection Notes
Select this component when a robust N-channel MOSFET with logic-level input is required for automotive environments. Consider the 30 V rating and high current capacity for 12 V systems. Evaluate the thermal performance based on the mounting base temperature limits. Ensure the application does not exceed the non-repetitive avalanche energy constraints during transient events.
Part Context
This part belongs to the NXP TrenchMOS family, which employs advanced trench gate technology to achieve low on-resistance and fast switching speeds. The DPAK package provides a cost-effective surface-mount solution with a dedicated mounting base for heat dissipation. This series is engineered to meet the rigorous reliability standards required for modern automotive electronic systems.
Replacement Considerations
Consult official NXP documentation for verified substitute part numbers. Cross-reference pinouts, voltage ratings, and thermal characteristics before implementation.
