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Product Detailed Parameters
- Description：MOSFET N-CH 55V 48A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：20mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：2210 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：103W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK9222-55A,118 is a logic level N-channel enhancement mode Field-Effect Transistor manufactured by Nexperia using TrenchMOS technology. It features a drain-source voltage of 55 V and a continuous drain current of 48 A at 25 °C mounting base temperature. The device supports a total power dissipation of 103 W under the same conditions. On-state resistance ranges from 17 mΩ to 24 mΩ depending on gate drive voltage. It includes an integrated source-drain diode with a reverse recovery time of 52 ns.
Feature Summary
- Compliant with AEC-Q101 automotive standards for critical applications
- Optimized for low conduction losses through reduced on-state resistance
- Compatible with logic level gate drive sources for simplified control
- Rated for operation in thermally demanding environments up to 175 °C
Applications
- 12 V and 24 V load switching
- Automotive and general purpose power switching
- Motor, lamp, and solenoid control circuits
Procurement Notes
Verify component authenticity against official Nexperia documentation before integration. Confirm package integrity and pin alignment match SOT428 specifications. Ensure storage conditions remain within specified limits to prevent degradation. Cross-reference ordering information to validate part number suffixes. Validate compliance with relevant environmental directives prior to deployment.
Selection Notes
Select this component when automotive qualification is required alongside high current handling capabilities. The logic level gate threshold simplifies driver interface design compared to standard level devices. Evaluate thermal management requirements based on the 103 W dissipation rating and junction-to-mounting base thermal resistance. Consider the 55 V breakdown voltage for systems operating near this limit.
Part Context
This device belongs to the Nexperia TrenchMOS family of N-channel enhancement mode FETs. It utilizes plastic packaging designed for surface-mount assembly. The product line targets automotive critical applications requiring robust performance under varying thermal conditions. The specific model integrates optimized channel architecture to minimize resistive losses during conduction phases.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Verify pinout compatibility and electrical parameter overlaps before swapping components. Ensure replacement parts meet identical AEC-Q101 qualification standards. Check for any changes in package dimensions or thermal characteristics that might affect existing board layouts.
