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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A TO220AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：10mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：4230 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：166W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK9511-55A,127 is a single N-channel Power MOSFET manufactured by Nexperia USA Inc. It utilizes TrenchMOS technology to deliver low on-resistance and high switching performance. The device features a drain-source breakdown voltage of 55 V and supports continuous drain currents up to 10 A at 25 °C. Designed for automotive applications, it complies with the AEC-Q101 standard. The component is housed in a TO-263AB (D2PAK) surface-mount package, providing robust thermal dissipation capabilities suitable for demanding power switching environments.
Feature Summary
- Compliant with AEC-Q101 automotive qualification standards
- Utilizes High-Performance Automotive TrenchMOS technology
- Features lead-free molding compound and halogen-free composition
Applications
- High-side load switching in automotive systems
- Motor control circuits
- General purpose power switching
Procurement Notes
Verify the specific suffix '127' corresponds to the tube packaging format when sourcing. Confirm that the part meets current RoHS directives and REACH regulations. Ensure the supplier provides traceability documentation required for automotive-grade components. Cross-reference the manufacturer part number with official Nexperia distributors to avoid counterfeit inventory.
Selection Notes
Select this component for designs requiring a 55 V rated N-channel switch with moderate current handling. The TO-263AB package offers superior thermal performance compared to smaller SMD packages. Consider the gate charge characteristics for driving efficiency in PWM applications. Verify that the PCB layout accommodates the exposed pad for optimal heat sinking.
Part Context
This part belongs to the BUK95xx-55A series of N-channel Power MOSFETs from Nexperia. These devices are engineered for automotive reliability and feature rugged avalanche ratings. The series is designed to replace older discrete solutions with integrated protection and lower conduction losses.
Replacement Considerations
Consult official Nexperia substitution guides for direct equivalents. Verify pinout compatibility and thermal resistance values before replacing existing components in established designs.
