ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 55V 52A TO220AB
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：20mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：2400 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：116W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Download product information
Overview
The BUK9520-55,127 is an N-channel enhancement mode logic level field-effect power transistor manufactured by NXP USA Inc. utilizing TrenchMOS technology in a TO-220AB plastic envelope. It features very low on-state resistance and integral Zener diodes providing ESD protection up to 2kV. Key electrical parameters include a drain-source voltage of 55 V, a DC drain current of 52 A at 25°C mounting base temperature, and a total power dissipation of 116 W. The device exhibits a maximum RDS(ON) of 20 mΩ at VGS = 5 V and ID = 25 A.
Feature Summary
- TrenchMOS technology for enhanced performance
- Logic level gate drive capability
- Integrated Zener diodes for ESD protection
Applications
- Automotive switching applications
- General purpose switching applications
Procurement Notes
Verify the component matches the exact part number BUK9520-55,127 with the specified TO-220AB package. Confirm authenticity through official NXP channels or authorized distributors. Check datasheet revisions to ensure compatibility with specific design requirements. Validate that the product meets RoHS3 compliance standards as indicated in manufacturer documentation.
Selection Notes
Select this component for designs requiring high current handling and low conduction losses. Ensure the thermal management system can handle the specified power dissipation limits. Verify that the gate drive circuitry provides sufficient voltage to fully enhance the channel. Consider the operating temperature range when determining derating factors for continuous operation.
Part Context
This part belongs to the Philips Semiconductors (now NXP) TrenchMOS family. It is designed as a robust solution for power switching tasks. The TO-220AB package facilitates effective heat dissipation through the mounting base connection. The device integrates protection features to withstand electrostatic discharge events common in industrial environments.
Replacement Considerations
Consult official NXP documentation for direct cross-references. Verify pinout compatibility and electrical specifications before substitution. Ensure any alternative device meets the same voltage, current, and thermal ratings.
