BUK9523-75A,127

Overview

The BUK9523-75A,127 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a TO-220AB plastic package. Designed for automotive critical applications, it complies with AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 75 V and a continuous drain current of 53 A at 25 °C mounting base temperature. The device features low on-state resistance ranging from 17 mΩ to 26 mΩ depending on gate drive conditions. It supports a total power dissipation of 138 W and operates within a junction temperature range of -55 °C to 175 °C.

Feature Summary

• Compliant with AEC-Q101 standards for automotive critical applications
• Low conduction losses achieved through low on-state resistance
• Compatible with logic level gate drive sources
• Suitable for thermally demanding environments due to high junction temperature rating

Applications

• 12 V, 24 V and 42 V loads
• Automotive and general purpose power switching
• Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when an N-channel MOSFET with logic level gate compatibility is required for automotive or industrial power switching. Ensure the application demands a 75 V breakdown voltage and can accommodate the thermal requirements of the TO-220AB package. Verify that the gate drive circuitry provides sufficient voltage to achieve the specified low on-state resistance values.

Part Context

This part belongs to the BUK95 series of N-channel TrenchMOS logic level FETs manufactured by Nexperia (formerly NXP Semiconductors). These devices are engineered for robust performance in power management circuits. The TO-220AB package facilitates heatsink mounting, making it suitable for applications requiring significant power handling capabilities in a single-ended configuration.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.