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Product Detailed Parameters
- Description：MOSFET N-CH 55V 46A TO220AB
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：21.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：1815 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：105W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK9524-55A,127 is an N-channel enhancement mode logic level Field-Effect Transistor utilizing TrenchMOS technology. Designed for automotive critical applications, it features a TO-220AB plastic package with a mounting base connected to the drain. Key electrical parameters include a drain-source voltage of 55 V and a continuous drain current of 46 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 20 mΩ at VGS=5V and ID=25A, supporting high-speed switching in DC-to-DC converters.
Feature Summary
- Compliant with AEC Q101 standards for automotive reliability
- Optimized for low conduction losses through reduced on-state resistance
- Compatible with standard logic level gate drive sources
- Rated for operation in thermally demanding environments up to 175 °C
Applications
- Switching 12 V and 24 V loads
- Automotive power switching circuits
- General purpose power switching
- Control of motors, lamps, and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring robust automotive-grade N-channel MOSFETs with high current handling capabilities. The TO-220AB package facilitates effective heat dissipation via direct heatsink mounting. Ensure the application utilizes logic-level drivers to fully exploit the low RDS(on) characteristics at standard logic voltages.
Part Context
This part belongs to the BUK95xx series of TrenchMOS transistors from NXP Semiconductors. It represents a generation of power FETs designed to balance low static resistance with fast dynamic switching performance. The TO-220AB form factor provides a standardized mechanical interface for high-power thermal management solutions in industrial and automotive enclosures.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Generic replacements must match the 55 V rating, 46 A current capacity, and TO-220AB package dimensions to ensure mechanical and electrical compatibility without redesign.
