BUK952R8-60E,127

Description：MOSFET N-CH 60V 120A TO220AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube

SKU:7dad40cdb650 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 120A TO220AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：120 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：17450 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：349W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK952R8-60E,127

Overview

The BUK952R8-60E is an N-channel TrenchMOS logic level MOSFET manufactured by Nexperia, designed for high-performance automotive applications. It operates with a drain-source voltage of 60V and supports a continuous drain current of 120A at 25°C mounting base temperature. The device features a low on-state resistance of 2.2mΩ typical at VGS=5V and ID=25A. It utilizes a TO-220AB (SOT78A) package with a thermal resistance from junction to mounting base of 0.43K/W. The component is qualified to the AEC-Q101 standard and rated for junction temperatures up to 175°C.

Feature Summary

Compliant with AEC-Q101 automotive qualification standards
Rated for repetitive avalanche energy operation
Capable of operation in thermally demanding environments up to 175°C
Features true logic level gate threshold ensuring reliable switching

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix matches the required package variant, as the datasheet specifies the SOT78A version. Confirm that the application design accounts for the absolute maximum ratings, particularly regarding pulsed currents and avalanche energy limits. Ensure proper heatsinking is implemented to maintain the mounting base temperature within specified operational boundaries for optimal current handling capabilities.

Selection Notes

Select this component when a robust N-channel MOSFET is required for 12V automotive circuits. The low RDS(on) minimizes conduction losses, while the TO-220AB package facilitates effective heat dissipation. Consider the 175°C junction rating for high-temperature environments. Verify that the gate drive voltage aligns with the logic level specifications to ensure full enhancement and minimal resistance during operation.

Part Context

This part belongs to the TrenchMOS family, utilizing advanced trench technology to achieve low on-resistance and fast switching speeds. The BUK952R8-60E is specifically engineered for automotive durability, meeting rigorous reliability standards. Its design focuses on providing high current capacity and ruggedness against electrical stress, making it suitable for critical power management tasks in vehicle electronics.